Photovoltaic apparatus having a filler layer and method for making the same

ABSTRACT

Devices for converting light into electric current are provided. A representative device has an encasing structure having at least one portion transparent. The encasing structure is configured to pass light energy into an interior of the encasing structure. The device further has a photovoltaic device positioned within the interior of the encasing structure. The photovoltaic device is positioned to receive light energy. The photovoltaic device is operable to transform the light energy into electric current. The device further has a protective space material, disposed between the encasing structure and the photovoltaic device. The protective space material is operable to transmit the light energy. The protective space material is a non-solid material having a physical property such as a viscosity of less than 1×10 6  cP and/or a thermal coefficient of expansion of greater than 500×10 −6 /° C.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims benefit under 35 U.S.C. § 119(e), of U.S.Provisional Patent Application No. 60/906,901, filed on Mar. 13, 2007,which is hereby incorporated by reference herein in its entirety.

BACKGROUND

This application is directed to photovoltaic solar cell construction. Inparticular, it is directed to a protective layer within a housing of aphotovoltaic panel or module that surrounds and/or encapsulates theactive photovoltaic device within the housing or module.

FIG. 1 is a schematic block diagram of a conventional photovoltaicdevice. A photovoltaic module 10 can typically have one or morephotovoltaic cells 12 a-b disposed within it. A photovoltaic cellconventionally is made by having a semiconductor junction 14 disposedbetween a layer of conducting material 18 and a layer of transparentconducting material 16. Light impinges upon the photovoltaic module 10and transmits through the transparent conducting material layer 16.Within the semiconductor junction layer 14, the photons interact withthe material to produce electron-hole pairs. The semiconductor(s)typically is/are doped creating an electric field extending from thejunction layer 14. Accordingly, when the holes and/or electrons arecreated by the sunlight in the semiconductor, they will migratedepending on the polarity of the device either to the transparentconducting material layer 16 or the conducting material layer 18. Thismigration creates current within the cell which is routed out of thecell for storage and/or instantaneous use.

One conducting node of the solar cell 12 a is shown electrically coupledto an opposite node of another solar cell 12 b. In this manner, thecurrent created in one cell may be transmitted to another, where it iseventually collected. The currently depicted apparatus in FIG. 1 isshown where the solar cells are coupled in series, thus creating ahigher voltage device. In another manner, (not shown) the solar cellscan be coupled in parallel which increases the resulting current ratherthan the voltage. In any case, the current application is directed toany solar cell apparatus, whether they are electrically coupled inseries, in parallel, or any combination thereof.

FIG. 2 is a schematic block diagram of a photovoltaic apparatus. Thephotovoltaic apparatus has a photovoltaic panel 20, which contains theactive photovoltaic devices, such as those described supra. Thephotovoltaic panel 20 can be made up of one or multiple photovoltaiccells, photovoltaic modules, or other like photovoltaic devices, singlyor multiples, solo or in combination with one another. A frame 22surrounds the outer edge of the photovoltaic panel that houses theactive photovoltaic devices. The frame 22 can be disposed flat or at anangle relative to photovoltaic panel 20.

FIG. 3 is a side cross sectional view of the photovoltaic apparatusshown in FIG. 2. In this case, the cross section is taken along the lineA-A′ shown above in FIG. 2. The photovoltaic panel has a photovoltaicsolar device 18 disposed within the frame 22. A glass, plastic, or othertranslucent barrier 26 is held by the frame 22 to shield thephotovoltaic device 18 from an external environment. In someconventional photovoltaic apparatuses, another laminate layer 24 isplaced between the photovoltaic device 18 and the translucent barrier26.

Light impinges through the transparent barrier 26 and strikes thephotovoltaic device 18. When the light strikes and is absorbed in thephotovoltaic device 18, electricity can be generated much like asdescribed with respect to FIG. 1.

While the transparent barrier 26 is designed to shield the photovoltaicdevice 18 from an external environment, many times the protectionafforded by the transparent barrier 26 is insufficient. In manyconventional photovoltaic panels, the transparent barrier 26 is wedgedto the frame and bordered by a rubber gasket seal. While the protectionof such a seal can be sufficient, the rubber seal will erode and/ordecompose over time. Accordingly, portions of the external environmentcan impinge upon the semiconductor portion of the photovoltaic device18, diminishing its performance. Further, upon the creation thephotovoltaic apparatus, moisture and other contaminants that might bepresent during the manufacturing process might be present within thespace within the frame 22. Again, such moisture and/or othercontaminants could interfere with an efficient operation of thephotovoltaic device 18.

In some conventional applications, a laminate 24 is placed between thephotovoltaic device 18 and the transparent barrier 26. This laminate 24can be heated so that it melts and affixes to the photovoltaic device 18as well as the transparent barrier 26, providing further environmentalprotection for the photovoltaic device 18. One such type of laminateused in photovoltaic apparatuses is ethylene vinyl acetate (EVA). TheEVA is applied to the active photovoltaic device, heated and then fusedto the device and laminate materials under pressure. At a temperature ofabout 85° C., the EVA melts and flows into the volume about thephotovoltaic device, and at approximately 120-125° C., the EVA starts tocrosslink.

It should be noted that the above identified melting process requiresmany more steps to make the full panel. Further, the heating performedon the laminate requires the photovoltaic device to be subjected atleast in part to the applied thermal energy. In some cases this canadversely affect the photovoltaic device itself. Furthermore, thelaminate such as EVA has the additional drawback that such materials arefrangible. Thus, if there is an accident in which the transparentconduction material 16 or 18 shatters, the laminate layer will alsoshatter. Accordingly, what is needed in the art are improved layers,disposed between the encasing structure and the photovoltaic device thatwill prevent shattering and that protect the photovoltaic device.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated into and constitute apart of this specification, illustrate one or more embodiments of thepresent invention and, together with the detailed description, serve toexplain the principles and implementations of the invention.

In the drawings:

FIG. 1 is a schematic block diagram of a conventional photovoltaicdevice in accordance with the prior art.

FIG. 2 is a schematic block diagram of a conventional photovoltaicapparatus in accordance with the prior art.

FIG. 3 is a side cross sectional view of the photovoltaic apparatusshown in FIG. 2.

FIG. 4 is cross section of a photovoltaic apparatus having anencapsulation layer.

FIG. 5 is a cross section of another photovoltaic apparatus with anencapsulation layer.

FIG. 6 is a perspective drawing of an elongated or cylindricalphotovoltaic apparatus.

FIG. 7 is a slice schematic diagram of an exemplary photovoltaicapparatus like that shown in FIG. 6, where the slice is taken in alongitudinal orientation perpendicular to a radial axis.

FIG. 8 is a slice schematic diagram of an another exemplary photovoltaicapparatus like that shown in FIG. 6, where the slice is taken in alongitudinal orientation perpendicular to a radial axis.

DETAILED DESCRIPTION

Embodiments of the present disclosure are described herein in thecontext of a solar cell architecture having a protective layer. Those ofordinary skill in the art will realize that the following detaileddescription of the present disclosure is illustrative only and is notintended to be in any way limiting. Other embodiments of the presentdisclosure will readily suggest themselves to such skilled personshaving the benefit of this disclosure. Reference will now be made indetail to implementations of the present invention as illustrated in theaccompanying drawings. The same reference indicators will be usedthroughout the drawings and the following detailed description to referto the same or like parts.

In the interest of clarity, not all of the routine features of theimplementations described herein are shown and described. It will, ofcourse, be appreciated that in the development of any such actualimplementation, numerous implementation-specific decisions must be madein order to achieve the developer's specific goals, such as compliancewith application- and business-related constraints, and that thesespecific goals will vary from one implementation to another and from onedeveloper to another. Moreover, it will be appreciated that such adevelopment effort might be complex and time-consuming, but wouldnevertheless be a routine undertaking of engineering for those ofordinary skill in the art having the benefit of this disclosure.

FIG. 4 is a cross sectional view of a photovoltaic apparatus having aprotection space 28. The cross section should be read as also beingacross the line A-A′ shown in FIG. 2. In FIG. 4, the photovoltaic device18 is disposed within the frame 22, and a transparent barrier 26 isdisposed along a face of the photovoltaic panel or module. However, asubstance is added to the space between the transparent barrier 26 andthe photovoltaic device 18. The substance can flow freely and has afirst viscosity v₀ during the pouring phase and prior to curing. As thesubstance is poured into the space between the frame 22, thephotovoltaic device 18 and the transparent barrier 26, it settles intothe space. Sufficient substance is poured into the space to fullysurround the photovoltaic device 18. Accordingly, the photovoltaicapparatus has, after the addition of the substance or mixture, aprotection space 28 that surrounds the photovoltaic device 18 andsubstantially fills the space bounded by the frame 22, the photovoltaicdevice 18, and the transparent barrier 26. Accordingly, in anembodiment, the substance being added is in liquid form as it is addedto the space within the apparatus frame. The substance being added(e.g., an oil) is transparent to light. In some embodiments, thesubstance is transparent to light if it permits light in the visiblespectrum (380 nm to 750 nm) to pass through the substance. In someembodiments, the substance is transparent to light if it permits lightin a portion of the visible spectrum (380 nm to 750 nm) to pass throughthe substance.

The substance forming protection space 28 should be one that provideselectrical protection for the semiconductor device, or, have beneficialdielectric properties. In some embodiments, the substance is chosen suchthat it cures, and such that its has viscosity v₁ after the curing phasethat is substantially greater that the viscosity v₀ during pouring.Thus, the structure of FIG. 4 can be summarized as a photovoltaic modulehaving a frame. Disposed within the frame is a photovoltaic device thatconverts light into electricity. At least one face of the photovoltaicmodule is a transparent barrier that allows light to pass to thephotovoltaic device, and provides an environmental seal of the interiorportion bounded by the frame. Most of the space that is bounded by thephotovoltaic device, the frame, and the transparent barrier is filledwith a substance. The substance has a first viscosity when added to thespace, and a second viscosity, termed an ending viscosity, when curedwithin a certain period of time. In some embodiments, the endingviscosity (second viscosity), is greater than the initial firstviscosity. In some embodiments, the ending viscosity (second viscosity),is the same as the initial first viscosity.

FIG. 5 is a cross section of another photovoltaic apparatus having anencapsulation layer. In this embodiment, the frame is a plurality ofwalls, and the faces are transparent layers 26 a-b. The photovoltaicdevice 18 is disposed within the volume bounded by the walls 22 a-b andthe transparent barriers 26 a-b. In this manner, both faces of thephotovoltaic apparatus can accept light, and electricity can begenerated by the photovoltaic apparatus from such light entering eitherthe face 26 a or the face 2 b. In this context, this could becharacterized as a bifacial frame for a photovoltaic device.

In the case of embodiments in accordance with FIG. 5, the substance isagain poured into the volume bounded by the walls 22 a-b and thetransparent barrier 26 a-b. The substance is poured such that itsubstantially encapsulates the photovoltaic device 18 thereby filling orpartially filling protection space 28. In some embodiments, thesubstance has a first viscosity v₀ during pouring, and a secondviscosity v₁ (ending viscosity) after the curing phase, where v₁ issubstantially greater than v₀. In some embodiments, the substance has afirst viscosity v₀ during pouring, and a second viscosity v₁ (endingviscosity) after the curing phase, where v₁ is identical to v₀.

The currently described apparatus can be based on many kinds ofgeometries, and the method for forming can be applied to all thosegeometries. This description should be read to encompass thosegeometries, and should not be restricted in scope to those specificgeometries explicitly mentioned.

FIG. 6 is a perspective drawing of an elongated or cylindricalphotovoltaic apparatus. The described structure and method can beapplied to this geometry as well.

FIG. 7 is a slice schematic diagram of an exemplary photovoltaicapparatus like that shown in FIG. 6, where the slice is taken in alongitudinal orientation perpendicular to a radial axis. Thephotovoltaic device 18 is disposed within the outer transparent barrier26. Light impinges upon the structure and is collected at thephotovoltaic device 18, where a portion of the light is transformed intoelectricity. The substance is poured into the space between thephotovoltaic device and the transparent barrier 26 thereby fillingprotection space 28.

FIG. 8 is a slice schematic diagram of an another exemplary photovoltaicapparatus like that shown in FIG. 6, where the slice is taken in alongitudinal orientation perpendicular to a radial axis. Thephotovoltaic device 18 is disposed within the outer transparent barrier26. The photovoltaic device in this case is tube-like, as opposed tosolid-cylindrical. Again, light impinges upon the structure and iscollected at the photovoltaic device 18, where a portion of the light istransformed into electricity. The substance is poured into the spacebetween the photovoltaic device and the transparent barrier 26 therebyforming protection space 28.

It should be noted that the many combinations of geometries of framing,transparent barrier, and photovoltaic device are possible. Potentialshapes of framing include box-like, angular, having various arcuatefeatures, or having no frames, such as that contemplated in FIGS. 7 and8. Potential geometries of transparent barriers can include cylindrical,various elongate structures where the radial dimension is far less thanthe length, panel-like, having arcuate features, box-like, or anypotential geometry suited for photovoltaic generation. The photovoltaicdevices themselves can be of various geometries, including panels,having arcuate features, elongate, cylindrical, or any potentialgeometry suited for photovoltaic generation. Again, this descriptionshould be interpreted as contemplating those various combinations. Thislist of combinations and the various sub-lists of potential geometriesshould be regarded as non-excusive in nature, and should be treated asexemplary of the various geometries and relationships in which theapparatus could be made or of the various geometries and relationshipsthat to which the method could be employed.

In some embodiments, the photovoltaic device is elongated, having alongitudinal dimension and a width dimension. In some embodiments, thelongitudinal dimension is at least four times greater than the widthdimension. In other embodiments, the longitudinal dimension is at leastfive times greater than the width dimension. In yet other embodiments,the longitudinal dimension is at least six times greater than the widthdimension. In some embodiments, the longitudinal dimension is 10 cm orgreater. In other embodiments, the longitudinal dimension is 50 cm orgreater. In some embodiments, the width dimension is 1 cm or greater. Inother embodiments, the width dimension is 5 cm or greater. In yet otherembodiments, the width dimension is 10 cm or greater. In someembodiments, the elongated substrate is closed at both ends, only at oneend, or open at both ends.

In one embodiment, the substance used to occupy protection space 28comprises a resin or resin-like substance, the resin potentially beingadded as one component, or added as multiple components that interactwith one another to effect a change in viscosity. In another embodiment,the resin can be diluted with a less viscous material, such as asilicon-based oil or liquid acrylates. In these cases, the viscosity ofthe initial substance can be far less than that of the resin materialitself.

In one example, a medium viscosity polydimethylsiloxane mixed with anelastomer-type dielectric gel can be used to occupy protection space 28.In one case, as an example, a mixture of 85% (by weight) Dow Corning 200fluid, 50 centistoke viscosity (PDMS, polydimethylsiloxane); 7.5% DowCorning 3-4207 Dielectric Tough Gel, Part A—Resin; and 7.5% Dow Corning3-4207 Dielectric Tough Gel, Part B—Catalyst is used to form protectionspace 28. Of course, other oils, gels, or silicones can be used toproduce much of what is described in the specification, and accordinglythis specification should be read to include those other oils, gels andsilicones to generate the described protection space 28. Such oilsinclude silicon based oils, and the gels include many commerciallyavailable dielectric gels, to name a few. Curing of silicones can alsoextend beyond a gel like state. Of course, commercially availabledielectric gels and silicones and the various formulations arecontemplated as being usable in this application.

In one example, the composition used to form the protection space 28 is85%, by weight, polydimethylsiloxane polymer liquid, where thepolydimethylsiloxane has the chemical formula(CH₃)₃SiO[SiO(CH₃)₂]_(n)Si(CH₃)₃, where n is a range of integers chosensuch that the polymer liquid has an average bulk viscosity that falls inthe range between 50 centistokes and 100,000 centistokes (all viscosityvalues given in this application for compositions assume that thecompositions are at room temperature). Thus, there may bepolydimethylsiloxane molecules in the polydimethylsiloxane polymerliquid with varying values for n provided that the bulk viscosity of theliquid falls in the range between 50 centistokes and 100,000centistokes. Bulk viscosity of the polydimethylsiloxane polymer liquidmay be determined by any of a number of methods known to those of skillin the art, such as by using a capillary viscometer. Further, thecomposition includes 7.5%, by weight, of a silicone elastomer comprisingat least sixty percent, by weight, dimethylvinyl-terminated dimethylsiloxane (CAS number 68083-19-2) and between 3 and 7 percent by weightsilicate (New Jersey TSRN 14962700-537 6P). Further, the compositionincludes 7.5%, by weight, of a silicone elastomer comprising at leastsixty percent, by weight, dimethylvinyl-terminated dimethyl siloxane(CAS number 68083-19-2), between ten and thirty percent by weighthydrogen-terminated dimethyl siloxane (CAS 70900-21-9) and between 3 and7 percent by weight trimethylated silica (CAS number 68909-20-6).

In one example, the composition used to form the protection space 28 issilicone oil mixed with a dielectric gel. The silicone oil is apolydimethylsiloxane polymer liquid, whereas the dielectric gel is amixture of a first silicone elastomer and a second silicone elastomer.As such, the composition used to form the filler layer 330 is X %, byweight, polydimethylsiloxane polymer liquid, Y %, by weight, a firstsilicone elastomer, and Z %, by weight, a second silicone elastomer,where X, Y, and Z sum to 100. Here, the polydimethylsiloxane polymerliquid has the chemical formula (CH₃)₃SiO[SiO(CH₃)₂]_(n)Si(CH₃)₃, wheren is a range of integers chosen such that the polymer liquid has anaverage bulk viscosity that falls in the range between 50 centistokesand 100,000 centistokes. Thus, there may be polydimethylsiloxanemolecules in the polydimethylsiloxane polymer liquid with varying valuesfor n provided that the bulk viscosity of the liquid falls in the rangebetween 50 centistokes and 100,000 centistokes. The first siliconeelastomer comprises at least sixty percent, by weight,dimethylvinyl-terminated dimethyl siloxane (CAS number 68083-19-2) andbetween 3 and 7 percent by weight silicate (New Jersey TSRN 14962700-5376P). Further, the second silicone elastomer comprises at least sixtypercent, by weight, dimethylvinyl-terminated dimethyl siloxane (CASnumber 68083-19-2), between ten and thirty percent by weighthydrogen-terminated dimethyl siloxane (CAS 70900-21-9) and between 3 and7 percent by weight trimethylated silica (CAS number 68909-20-6). Inthis embodiment, X may range between 30 and 90, Y may range between 2and 20, and Z may range between 2 and 20, provided that X, Y and Z sumto 100 percent.

In another example, the composition used to form the protection space issilicone oil mixed with a dielectric gel. The silicone oil is apolydimethylsiloxane polymer liquid, whereas the dielectric gel is amixture of a first silicone elastomer and a second silicone elastomer.As such, the composition used to form the filler layer 330 is X %, byweight, polydimethylsiloxane polymer liquid, Y %, by weight, a firstsilicone elastomer, and Z %, by weight, a second silicone elastomer,where X, Y, and Z sum to 100. Here, the polydimethylsiloxane polymerliquid has the chemical formula (CH₃)₃SiO[SiO(CH₃)₂]_(n)Si(CH₃)₃, wheren is a range of integers chosen such that the polymer liquid has avolumetric thermal expansion coefficient of at least 500×10⁻⁶/° C. Thus,there may be polydimethylsiloxane molecules in the polydimethylsiloxanepolymer liquid with varying values for n provided that the polymerliquid has a volumetric thermal expansion coefficient of at least960×10⁻⁶/° C. The first silicone elastomer comprises at least sixtypercent, by weight, dimethylvinyl-terminated dimethyl siloxane (CASnumber 68083-19-2) and between 3 and 7 percent by weight silicate (NewJersey TSRN 14962700-537 6P). Further, the second silicone elastomercomprises at least sixty percent, by weight, dimethylvinyl-terminateddimethyl siloxane (CAS number 68083-19-2), between ten and thirtypercent by weight hydrogen-terminated dimethyl siloxane (CAS 70900-21-9)and between 3 and 7 percent by weight trimethylated silica (CAS number68909-20-6). In this embodiment, X may range between 30 and 90, Y mayrange between 2 and 20, and Z may range between 2 and 20, provided thatX, Y and Z sum to 100 percent.

In the present disclosure, a composition used to occupy the protectionspace 28 that is bounded by the photovoltaic device 18, the frame 22,and the transparent barrier 26 and this material is termed theprotective space material. In some embodiments, the protective spacematerial occupies at least 50% of the total volume of the protectionspace 28, at least 60% of the total volume of the protection space 28,at least 70% of the total volume of the protection space 28, at least80% of the total volume of the protection space 28, or at least 90% ofthe total volume of the protection space 28, where the balance of thevolume is a gas such as air.

In some embodiments, the composition used to occupy the protection space28 (“the protective space material”) is a crystal clear silicon oilmixed with a dielectric gel. In some embodiments, the protective spacematerial has a volumetric thermal coefficient of expansion of greaterthan 250×10⁻⁶/° C., greater than 300×10⁻⁶/° C., greater than 400×10⁻⁶/°C., greater than 500×10⁻⁶/° C., greater than 1000×10⁻⁶/° C., greaterthan 2000×10⁻⁶/° C., greater than 5000×10⁻⁶/° C., or between 250×10⁻⁶/°C. and 10000×10⁻⁶/° C. In some embodiments, the protective material hasan adhesion of more than 9.8 m/seconds². The protective space materialsof the present disclosure are advantageous over the prior art becausethey have a tackness that allows them to adhere to the transparent layer26 such that, were the transparent layer to shatter, the adhesive bondsbetween the protective space material and the transparent layer 26shards would prevent the shards from scattering and causing harm tosubjects.

In some embodiments, a silicone-based dielectric gel can be usedin-situ. The dielectric gel can also be mixed with a silicone based oilto reduce both beginning and ending viscosities. The ratio ofsilicone-based oil by weight in the mixture can be varied. Thepercentage of silicone-based oil by weight in the mixture ofsilicone-based oil and silicone-based dielectric gel can have values ator about (e.g. ±2.5%) 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%,75%, and 85%. Ranges of 20%-30%, 25%-35%, 30%-40%, 35%-45%, 40%-50%,45%-55%, 50%-60%, 55%-65%, 60%-70%, 65%-75%, 70%-80%, 75%-85%, and80%-90% (by weight) are also contemplated. Further, these same ratios byweight can be contemplated for the mixture when using other types ofoils or acrylates instead of or in addition to silicon-based oil tolessen the beginning viscosity of the gel mixture alone.

The initial viscosity of the mixture of 85% Dow Corning 200 fluid, 50centistoke viscosity (PDMS, polydimethylsiloxane); 7.5% Dow Corning3-4207 Dielectric Tough Gel, Part A—Resin 7.5% Dow Corning 3-4207Dielectric Tough Gel, Part B—Pt Catalyst is approximately 100 centipoise(cP). Beginning viscosities of less than 1, less than 5, less than 10,less than 25, less than 50, less than 100, less than 250, less than 500,less than 750, less than 1000, less than 1200, less than 1500, less than1800, and less than 2000 cP are imagined, and any beginning viscosity inthe range 1-2000 cP is acceptable. Other ranges can include 1-10 cP,10-50 cP, 50-100 cP, 100-250 cP, 250-500 cP, 500-750 cP, 750-1000 cP,800-1200 cP, 1000-1500 cP, 1250-1750 cP, 1500-2000 cP, and 1800-2000 cP.In some cases an initial viscosity between 1000 cP and 1500 cP can alsobe used.

A final viscosity for the protection space 28 of well above the initialviscosity is envisioned in some embodiments. In most cases, a ratio ofthe final viscosity to the beginning viscosity is at least 50:1. Withlower beginning viscosities, the ratio of the final viscosity to thebeginning viscosity may be 20,000:1, or in some cases, up to 50,000:1.In most cases, a ratio of the final viscosity to the beginning viscosityof between 5,000:1 to 20,000:1, for beginning viscosities in the 10 cPrange, may be used. For beginning viscosities in the 1000 cP range,ratios of the final viscosity to the beginning viscosity between 50:1 to200:1 are imagined. In short order, ratios in the ranges of 200:1 to1,000:1, 1,000:1 to 2,000:1, 2,000:1 to 5,000:1, 5,000:1 to 20,000:1,20,000:1 to 50,000:1, 50,000:1 to 100,000:1, 100,000:1 to 150,000:1, and150,000:1 to 200,000:1 are contemplated.

The final viscosity of the protection space 28 is typically on the orderof 50,000 cP to 200,000 cP. In some cases, a final viscosity of at least1×10⁶ cP is envisioned. Final viscosities of at least 50,000 cP, atleast 60,000 cP, at least 75,000 cP, at least 100,000 cP, at least150,000 cP, at least 200,000 cP, at least 250,000 cP, at least 300,000cP, at least 500,000 cP, at least 750,000 cP, at least 800,000 cP, atleast 900,000 cP, and at least 1×10⁶ cP are all envisioned. Ranges offinal viscosity for the encapsulation layer can include 50,000 cP to75,000 cP, 60,000 cP to 100,000 cP, 75,000 cP to 150,000 cP, 100,000 cPto 200,000 cP, 100,000 cP to 250,000 cP, 150,000 cP to 300,000 cP,200,000 cP to 500,000 cP, 250,000 cP to 600,000 cP, 300,000 cP to750,000 cP, 500,000 cP to 800,000 cP, 600,000 cP to 900,000 cP, and750,000 cP to 1×10⁶ cP.

Curing temperatures can be numerous, with a common curing temperature ofroom temperature. With this in mind, the curing step need not involveadding thermal energy to the system. Temperatures that can be used forcuring can be envisioned (with temperatures in degrees F.) at up to 60degrees, up to 65 degrees, up to 70 degrees, up to 75 degrees, up to 80degrees, up to 85 degrees, up to 90 degrees, up to 95 degrees, up to 100degrees, up to 105 degrees, up to 110 degrees, up to 115 degrees, up to120 degrees, up to 125 degrees, and up to 130 degrees, and temperaturesgenerally between 55 and 130 degrees. Other curing temperature rangescan include 60-85 degrees, 70-95 degrees, 80-110 degrees, 90-120degrees, and 100-130 degrees. It should be noted that all theseindividual temperatures and ranges are less than that needed tocrosslink EVA.

The working time of the substance of a mixture can be varied as well.The working time of a mixture in this context means the time for thesubstance (e.g., the substance used to form the protective spacematerial 28) to cure to a viscosity more than double the initialviscosity when mixed. Working time for the layer can be varied. Inparticular, working times of less than 5 minutes, on the order of 10minutes, up to 30 minutes, up to 1 hour, up to 2 hours, up to 4 hours,up to 6 hours, up to 8 hours, up to 12 hours, up to 18 hours, and up to24 hours are all contemplated. A working time of 1 day or less is foundto be best in practice. Any working time between 5 minutes and 1 day isacceptable.

In context of this disclosure, resin can mean both synthetic and naturalsubstances that have a viscosity prior to curing and a greater viscosityafter curing. The resin can be unitary in nature, or may be derived fromthe mixture of two other substances to form the resin.

In yet another embodiment the protection space 28 may comprise solely aliquid. In one case the filler layer may be a dielectric oil. Suchdielectric oils may be silicone-based. In one example, the oil can be85% Dow Corning 200 fluid, 50 centistoke viscosity (PDMS,polydimethylsiloxane), One will realize that many differing oils can beused in place of polydimethylsiloxane, and this application should beread to include such other similar dielectric oils having the properoptical properties. Ranges of bulk viscosity of the oil by itself canrange from include 1-1 centistokes, 1-5 centistokes, 5-10 centistokes,10-25 centistokes, 25-50 centistokes, 40-60 centistokes, 50-75centistokes, 75-100 centistokes, and 80-120 centistokes. Ranges betweeneach of the individual points mentioned in this paragraph are alsocontemplated.

In some embodiments the material in the protection space 28 has aviscosity of less than 1×10⁶ cP. In some embodiments, the material inthe protection space 28 has a thermal coefficient of expansion ofgreater than 500×10⁻⁶/° C. or greater than 1000×10⁻⁶/° C. In someembodiments, the material in the protection space 28 comprisesepolydimethylsiloxane polymer. In some embodiments, the material in theprotection space 28 comprises by weight: less than 50% of a dielectricgel or components to form a dielectric gel; and at least 30% of asilicone oil, the silicone oil having a beginning viscosity of no morethan half of the beginning viscosity of the dielectric gel or componentsto form the dielectric gel. In some embodiments, the material in theprotection space 28 has a thermal coefficient of expansion of greaterthan 500×10⁻⁶/° C. and comprises by weight: less than 50% of adielectric gel or components to form a dielectric gel; and at least 30%of a silicone oil. In some embodiments, the material in the protectionspace 28 is formed from silicone oil mixed with a dielectric gel. Insome embodiments, the silicone oil is a polydimethylsiloxane polymerliquid and the dielectric gel is a mixture of a first silicone elastomerand a second silicone elastomer. In some embodiments, the material inthe protection space 28 is formed from X %, by weight,polydimethylsiloxane polymer liquid, Y %, by weight, a first siliconeelastomer, and Z %, by weight, a second silicone elastomer, where X, Y,and Z sum to 100. In some embodiments, the polydimethylsiloxane polymerliquid has the chemical formula (CH₃)₃SiO[SiO(CH₃)₂]_(n)Si(CH₃)₃, wheren is a range of integers chosen such that the polymer liquid has anaverage bulk viscosity that falls in the range between 50 centistokesand 100,000 centistokes. In some embodiments, first silicone elastomercomprises at least sixty percent, by weight, dimethylvinyl-terminateddimethyl siloxane and between 3 and 7 percent by weight silicate. Insome embodiments, the second silicone elastomer comprises: (i) at leastsixty percent, by weight, dimethylvinyl-terminated dimethyl siloxane;(ii) between ten and thirty percent by weight hydrogen-terminateddimethyl siloxane; and (iii) between 3 and 7 percent by weighttrimethylated silica. In some embodiments, X is between 30 and 90; Y isbetween 2 and 20; and Z is between 2 and 20.

In some embodiments, the material in the protection space 28 comprises asilicone gel composition, comprising: (A) 100 parts by weight of a firstpolydiorganosiloxane containing an average of at least twosilicon-bonded alkenyl groups per molecule and having a viscosity offrom 0.2 to 10 Pa·s at 25° C.; (B) at least about 0.5 part by weight toabout 10 parts by weight of a second polydiorganosiloxane containing anaverage of at least two silicone-bonded alkenyl groups per molecule,where the second polydiorganosiloxane has a viscosity at 25° C. of atleast four times the viscosity of the first polydiorganosiloxane at 25°C.; (C) an organohydrogensiloxane having the average formula R₇Si(SiOR⁸₂H)₃ wherein R⁷ is an alkyl group having 1 to 18 carbon atoms or aryl,R⁸ is an alkyl group having 1 to 4 carbon atoms, in an amount sufficientto provide from 0.1 to 1.5 silicone-bonded hydrogen atoms per alkenylgroup in components (A) and (B) combined; and (D) a hydrosilylationcatalyst in an amount sufficient to cure the composition as disclosed inU.S. Pat. No. 6,169,155, which is hereby incorporated by referenceherein in its entirety. In fact, any of the compounds disclosed in U.S.Pat. No. 6,169,155, which is hereby incorporated by reference herein inits entirety, can be used to occupy all or a portion of protection space28.

In context, the above-described photovoltaic device can be made ofvarious substrates, and in any variety of manners. Examples of compoundsthat can be used to produce the semiconductor photovoltaic cell caninclude Group IV elemental semiconductors such as: carbon (C), silicon(Si) (both amorphous and crystalline), germanium (Ge); Group IV compoundsemiconductors, such as: silicon carbide (SiC), silicon germanide(SiGe); Group III-V semiconductors, such as: aluminum antimonide (AlSb),aluminum, arsenide (AlAs), aluminum nitride (AlN), aluminum phosphide(AlP), boron nitride (BN), boron arsenide (BAs), gallium antimonide(GaSb), gallium arsenide (GaAs), gallium nitride (GaN), galliumphosphide (GaP), indium antimonide (InSb), indium arsenide (InAs),indium nitride (InN), indium phosphide (InP); Group III-V ternarysemiconductor alloys, such as: aluminum gallium arsenide (AlGaAs,AlxGa1-xAs), indium gallium arsenide (InGaAs, InxGa1-xAs), aluminumindium arsenide (AlInAs), aluminum indium antimonide (AlInSb), galliumarsenide nitride (GaAsN), gallium arsenide phosphide (GaAsP), aluminumgallium nitride (AlGaN), aluminum gallium phosphide (AlGaP), indiumgallium nitride (InGaN), indium arsenide antimonide (InAsSb), indiumgallium antimonide (InGaSb); Group III-V quaternary semiconductoralloys, such as: aluminum gallium indium phosphide (AlGaInP, alsoInAlGaP, InGaAlP, AlInGaP), aluminum gallium arsenide phosphide(AlGaAsP), indium gallium arsenide phosphide (InGaAsP), aluminum indiumarsenide phosphide (AlInAsP), aluminum gallium arsenide nitride(AlGaAsN), indium gallium arsenide nitride (InGaAsN), indium aluminumarsenide nitride (InAlAsN); Group III-V quinary semiconductor alloys,such as: gallium indium nitride arsenide antimonide (GaInNAsSb); GroupII-VI semiconductors, such as: cadmium selenide (CdSe), cadmium sulfide(CdS), cadmium telluride (CdTe), zinc oxide (ZnO), zinc selenide (ZnSe),zinc sulfide (ZnS), zinc telluride (ZnTe); Group II-VI ternary alloysemiconductors, such as: cadmium zinc telluride (CdZnTe, CZT), mercurycadmium telluride (HgCdTe), mercury zinc telluride (HgZnTe), mercuryzinc selenide (HgZnSe); Group I-VII semiconductors, such as: cuprouschloride (CuCl); Group IV-VI semiconductors, such as: lead selenide(PbSe), lead sulfide (PbS), lead telluride (PbTe), tin sulfide (SnS),tin telluride (SnTe); Group IV-VI ternary semiconductors, such as: leadtin telluride (PbSnTe), thallium tin telluride (Tl₂SnTe₅), thalliumgermanium telluride (Tl₂GeTe₅); Group V-VI semiconductors, such as:bismuth telluride (Bi₂Te₃); Group II-V semiconductors, such as: cadmiumphosphide (Cd₃P₂), cadmium arsenide (Cd₃As₂), cadmium antimonide(Cd₃Sb₂), zinc phosphide (Zn₃P₂), zinc arsenide (Zn₃As₂), zincantimonide (Zn₃Sb₂); layered semiconductors, such as: lead(II) iodide(PbI₂), molybdenum disulfide (MOS₂), gallium selenide (GaSe), tinsulfide (SnS), bismuth sulfide (Bi₂S₃); others, such as: copper indiumgallium selenide (CIGS), platinum silicide (PtSi), bismuth(III) iodide(BiI₃), mercury(II) iodide (HgI₂), thallium(I) bromide (TlBr); ormiscellaneous oxides, such as: titanium dioxide anatase (TiO₂),copper(I) oxide (Cu₂O), copper(II) oxide (CuO), uranium dioxide (UO₂),or Uranium trioxide (UO₃). This listing is not exclusive, but exemplaryin nature. Further, the individual grouping lists are also exemplary andnot exclusive. Accordingly, this description of the potentialsemiconductors that can be used in the photovoltaic should be regardedas illustrative.

The foregoing materials may be used with various dopings to a formsemiconductor junction. For example, a layer of silicon can be dopedwith an element or substance, such that when the doping material isadded, it takes away (accepts) weakly-bound outer electrons, andincreases the number of free positive charge carriers (e.g. a p-typesemiconductor.) Another layer can be doped with an element or substance,such that when the doping material is added, it gives (donates)weakly-bound outer electrons addition and increases the number of freeelectrons (e.g. an n-type semiconductor.) An intrinsic semiconductor,also called an undoped semiconductor or i-type semiconductor, can alsobe used. This intrinsic semiconductor is typically a pure semiconductorwithout any significant doping. The intrinsic semiconductor, also calledan undoped semiconductor or i-type semiconductor, is a puresemiconductor without any significant dopants present. The semiconductorjunction layer can be made from various combinations of p-, n-, andi-type semiconductors, and this description should be read to includethose combinations.

The photovoltaic device may be made in various ways and have variousthicknesses. The photovoltaic device as described herein may be aso-called thick-film semiconductor structure or a so-called thin-filmsemiconductor structure as well.

In an embodiment, a device for converting light into electric current iscontemplated. The device has encasing structure having at least oneportion transparent and capable of passing light energy into an interiordefined by the sides of the encasing structure. A means for convertinglight into electric current is disposed within the interior of theencasing structure, and positioned to receive the light energy enteringit. The means for converting light into electric current catches theincoming light and transforms it into electric current. A protectivespace material is disposed between the encasing structure and the meansfor converting light into electric current, where the protective spacematerial can transmit the light energy. The protective space material isa non-solid material having a viscosity less than 1×10⁶ cP. In anotherembodiment, the protective space material is made of at least partlyfrom an elastomer gel. In one embodiment, the means for converting lightinto electric current is a semiconductor-based photovoltaic cell.

A method for making a device for converting light into electric currentis also contemplated. The method comprises a step of providing anencasing structure having an interior volume. A step of providing ameans for within the encasing structure is also contemplated. Asubstance in is poured into the encasing structure and cured in situwithin the encasing structure. In one embodiment, the substance has aviscosity of less than 50,000 cP a time when it is being poured into theencasing structure. In further extension, the substance is cured suchthat the viscosity of the substance after curing is over 50,000 cP at atime t₂. The time t₂ is contemplated to be a time over 1 minute from theend of the pouring. In yet another embodiment, the step of curing takesplace at a temperature less than 125 degrees Fahrenheit.

In some embodiments, photovoltaic device 18 comprises a rigid substrate.In some embodiments, all or a portion of the substrate is rigid.Rigidity of a material can be measured using several different metricsincluding, but not limited to, Young's modulus. In solid mechanics,Young's Modulus (E) (also known as the Young Modulus, modulus ofelasticity, elastic modulus or tensile modulus) is a measure of thestiffness of a given material. It is defined as the ratio, for smallstrains, of the rate of change of stress with strain. This can beexperimentally determined from the slope of a stress-strain curvecreated during tensile tests conducted on a sample of the material.Young's modulus for various materials is given in the following table:

Young's modulus Young's modulus (E) in Material (E) in GPa lbf/in² (psi)Rubber (small strain) 0.01-0.1   1,500-15,000 Low density polyethylene   0.2    30,000 Polypropylene 1.5-2   217,000-290,000 Polyethyleneterephthalate   2-2.5 290,000-360,000 Polystyrene   3-3.5435,000-505,000 Nylon 3-7 290,000-580,000 Aluminum alloy  69 10,000,000Glass (all types)  72 10,400,000 Brass and bronze 103-124 17,000,000Titanium (Ti) 105-120 15,000,000-17,500,000 Carbon fiber reinforcedplastic 150 21,800,000 (unidirectional, along grain) Wrought iron andsteel 190-210 30,000,000 Tungsten (W) 400-410 58,000,000-59,500,000Silicon carbide (SiC) 450 65,000,000 Tungsten carbide (WC) 450-65065,000,000-94,000,000 Single Carbon nanotube 1,000+  145,000,000 Diamond (C) 1,050-1,200 150,000,000-175,000,000

In some embodiments of the present application, a material (e.g., asubstrate) is deemed to be rigid when it is made of a material that hasa Young's modulus of 20 GPa or greater, 30 GPa or greater, 40 GPa orgreater, 50 GPa or greater, 60 GPa or greater, or 70 GPa or greater. Insome embodiments of the present application a material (e.g., asubstrate) is deemed to be rigid when Young's modulus for the materialis a constant over a range of strains. Such materials are called linear,and are said to obey Hooke's law. Thus, in some embodiments, a substrateis made out of a linear material that obeys Hooke's law. Examples oflinear materials include steel, carbon fiber, and glass. Rubber and soil(except at very low strains) are non-linear materials. In someembodiments, a material is considered rigid when it adheres to the smalldeformation theory of elasticity, when subjected to any amount of forcein a large range of forces (e.g., between 1 dyne and 10⁵ dynes, between1000 dynes and 10⁶ dynes, between 10,000 dynes and 10⁷ dynes), such thatthe material only undergoes small elongations or shortenings or otherdeformations when subject to such force. The requirement that thedeformations (or gradients of deformations) of such exemplary materialsare small means, mathematically, that the square of either of thesequantities is negligibly small when compared to the first power of thequantities when exposed to such a force. Another way of stating therequirement for a rigid material is that such a material, over a largerange of forces (e.g., between 1 dyne and 10⁵ dynes, between 1000 dynesand 10⁶ dynes, between 10,000 dynes and 10⁷ dynes), is wellcharacterized by a strain tensor that only has linear terms. The straintensor for materials is described in Borg, 1962, Fundamentals ofEngineering Elasticity, Princeton, N.J., pp. 36-41, which is herebyincorporated by reference herein in its entirety. In some embodiments, amaterial is considered rigid when a sample of the material of sufficientsize and dimensions does not bend under the force of gravity.

Thus, a photovoltaic apparatus having an active photovoltaic devicesubstantially encapsulated in a non-solid protective space material isdescribed and illustrated. Those skilled in the art will recognize thatmany modifications and variations of the present invention are possiblewithout departing from the invention. Of course, the various featuresdepicted in each of the figures and the accompanying text may becombined together.

Accordingly, it should be clearly understood that the present inventionis not intended to be limited by the particular features specificallydescribed and illustrated in the drawings, but the concept of thepresent invention is to be measured by the scope of the appended claims.It should be understood that various changes, substitutions, andalterations could be made hereto without departing from the spirit andscope of the invention as described by the appended claims that follow.

While embodiments and applications of this invention have been shown anddescribed, it would be apparent to these skilled in the art having thebenefit of this disclosure that many more modifications than mentionedabove are possible without departing from the inventive concepts herein.The invention, therefore, is not to be restricted except in the spiritof the appended claims.

1. A device for converting light into electric current, the devicecomprising: an encasing structure wherein at least one portion of theencasing is transparent and configured to pass light energy into aninterior of the encasing structure; at least one photovoltaic devicepositioned within the interior of the encasing structure, and positionedto receive the light energy, the at least one photovoltaic deviceoperable to transform the light energy into electric current, wherein aphotovoltaic device in the at least one photovoltaic devices comprises asubstrate having a Young's modulus of 20 GPa or greater; and aprotective space material, disposed between the encasing structure andthe at least one photovoltaic device and operable to transmit the lightenergy, the protective space material being a non-solid material.
 2. Thedevice of claim 1, wherein the protective space material has a viscosityof less than 1×10⁶ cP.
 3. The device of claim 1, wherein the protectivespace material has a thermal coefficient of expansion of greater than500×10⁻⁶/° C.
 4. The device of claim 1, wherein the protective spacematerial has a thermal coefficient of expansion of greater than1000×10⁻⁶/° C.
 5. The device of claim 1, wherein the protective spacematerial comprises a polydimethylsiloxane polymer.
 6. The device ofclaim 1, wherein the protective space material comprises by weight: lessthan 50% of a dielectric gel or components to form a dielectric gel; andat least 30% of a silicon oil, the silicon oil having a beginningviscosity of no more than half of the beginning viscosity of thedielectric gel or components to form the dielectric gel.
 7. The deviceof claim 1, wherein the protective space material has a thermalcoefficient of expansion of greater than 500×10⁻⁶/° C. and wherein theprotective space material comprises by weight: less than 50% of adielectric gel or components to form a dielectric gel; and at least 30%of a silicon oil
 8. The device of claim 1, wherein the protective spacematerial is formed from silicon oil mixed with a dielectric gel.
 9. Thedevice of claim 8 wherein the silicon oil is a polydimethylsiloxanepolymer liquid and the dielectric gel is a mixture of a first siliconeelastomer and a second silicone elastomer.
 10. The device of claim 1,wherein the protective space material is formed from X %, by weight,polydimethylsiloxane polymer liquid, Y %, by weight, a first siliconeelastomer, and Z %, by weight, a second silicone elastomer, where X, Y,and Z sum to
 100. 11. The device of claim 10, wherein thepolydimethylsiloxane polymer liquid has the chemical formula(CH₃)₃SiO[SiO(CH₃)₂]_(n)Si(CH₃)₃, where n is a range of integers chosensuch that the polymer liquid has an average bulk viscosity that falls inthe range between 50 centistokes and 100,000 centistokes.
 12. The deviceof claim 10, wherein the first silicone elastomer comprises at leastsixty percent, by weight, dimethylvinyl-terminated dimethyl siloxane andbetween 3 and 7 percent by weight silicate.
 13. The device of claim 10,wherein the second silicone elastomer comprises: (i) at least sixtypercent, by weight, dimethylvinyl-terminated dimethyl siloxane; (ii)between ten and thirty percent by weight hydrogen-terminated dimethylsiloxane; and (iii) between 3 and 7 percent by weight trimethylatedsilica.
 14. The device of claim 10 wherein X is between 30 and 90; Y isbetween 2 and 20; and Z is between 2 and
 20. 15. The device of claim 10,wherein the polydimethylsiloxane polymer liquid has the chemical formula(CH₃)₃SiO[SiO(CH₃)₂]_(n)Si(CH₃)₃, where n is a range of integers chosensuch that the polymer liquid has a volumetric thermal expansioncoefficient of at least 500×10⁻⁶/° C.
 16. A device for converting lightinto electric current, the device comprising: an encasing structurewherein at least one portion of the encasing structure is transparentand configured to pass light energy into an interior of the encasingstructure; a photovoltaic device positioned within the interior of theencasing structure, and positioned to receive the light energy, thephotovoltaic device operable to transform the light energy into electriccurrent; a protective space material, disposed between the encasingstructure and the photovoltaic device and operable to transmit the lightenergy, wherein the protective space material comprises by weight: lessthan 50% of a dielectric gel or components to form a dielectric gel; andat least 30% of a silicon oil, the silicon oil having a beginningviscosity no more than half of the beginning viscosity of the dielectricgel or components to form the dielectric gel.
 17. A device forconverting light into electric current, the device comprising: anencasing structure, at least a portion of the encasing structure beingtransparent and capable of passing light energy into an interior of theencasing structure; a means for producing electricity from light energydisposed within the interior of the encasing structure, and positionedto receive the light energy, the photovoltaic device operable totransform the light energy into electric current; a protective spacematerial, disposed between the encasing structure and the photovoltaicdevice and operable to transmit the light energy, the protective spacematerial comprising a gel; wherein the protective space materialcomprises by weight: less than 50% of a dielectric gel or components toform a dielectric gel; and at least 30% of a silicon oil, the siliconoil having a beginning viscosity no more than half of the beginningviscosity of the dielectric gel or components to form the dielectricgel.
 18. A method for making a device for converting light into electriccurrent, the method comprising: providing an encasing structure havingan interior volume; providing within the encasing structure aphotovoltaic device; pouring into the encasing structure a substance inliquid form, the substance having a viscosity of less than 50,000 cP ata time t₁, the time t₁ being during the pouring; curing the substance,wherein the viscosity of the substance after curing is over 50,000 cP ata time t₂, the time t₂ being over 1 minute from the end of the pouring;wherein the substance comprises by weight: less than 50% of a dielectricgel or components to form a dielectric gel; and at least 30% of asilicon oil, the silicon oil having a beginning viscosity no more thanhalf of the beginning viscosity of the dielectric gel or components toform the dielectric gel.
 19. A method for making a device for convertinglight into electric current, the method comprising: providing anencasing structure having an interior volume; providing within theencasing structure a photovoltaic device; providing within the encasingstructure a substance, the substance substantially encapsulating thephotovoltaic device; curing the substance, the step of curing takingplace at a temperature less than 125 degrees Fahrenheit; wherein thesubstance comprises by weight: less than 50% of a dielectric gel orcomponents to form a dielectric gel; and at least 30% of a silicon oil,the silicon oil having a beginning viscosity no more than half of thebeginning viscosity of the dielectric gel or components to form thedielectric gel.
 20. A device for converting light into electric current,the device comprising: an elongated encasing structure, the encasingstructure having a first portion transparent and capable of passinglight energy into an interior of the encasing structure, the firstcomponent having at least one arcuate component; a photovoltaic devicepositioned within the interior of the encasing structure, and positionedto receive the light energy, the photovoltaic device operable totransform the light energy into electric current, wherein thephotovoltaic device comprises a substrate having a Young's modulus of 20GPa or greater; a protective space material, disposed between theencasing structure and the photovoltaic device and operable to transmitthe light energy, the protective space material being a transparentnon-solid material.
 21. The device of claim 20, wherein the protectivespace material has a viscosity of less than 1×10⁶ cp.
 22. The device ofclaim 20, wherein the protective space material has a thermalcoefficient of expansion of greater than 500×10⁻⁶/° C.
 23. The device ofclaim 20, wherein the protective space material has a thermalcoefficient of expansion of greater than 1000×10⁻⁶/° C.
 24. A device forconverting light into electric current, the device comprising: anelongated encasing structure, the encasing structure having a firstportion transparent and capable of passing light energy into an interiorof the encasing structure, the first component having at least onearcuate component; a photovoltaic device positioned within the interiorof the encasing structure, and positioned to receive the light energy,the photovoltaic device operable to transform the light energy intoelectric current, wherein the photovoltaic device comprises a substratehaving a Young's modulus of 20 GPa or greater; and a protective spacematerial, disposed between the encasing structure and the photovoltaicdevice and operable to transmit the light energy, the protective spacematerial comprising an elastomer gel.
 25. A device for converting lightinto electric current, the device comprising: an elongated encasingstructure, the encasing structure having a first portion transparent andcapable of passing light energy into an interior of the encasingstructure, the first component having at least one arcuate component; ameans for producing electricity from light energy disposed within theinterior of the encasing structure, and positioned to receive the lightenergy, the means for producing electricity operable to transform thelight energy into electric current, wherein the means for producingelectricity comprises a substrate having a Young's modulus of 20 GPa orgreater; and a protective space material, disposed between the encasingstructure and the photovoltaic device and operable to transmit the lightenergy, the protective space material comprising a gel.
 26. A method formaking a device for converting light into electric current, the methodcomprising: providing an elongated encasing structure having an interiorvolume, the encasing structure having a first portion transparent andcapable of passing light energy into an interior of the encasingstructure, the first component having at least one arcuate component;providing within the encasing structure a photovoltaic device; pouringinto the elongated encasing structure a substance in liquid form, thesubstance having a viscosity of less than 50,000 cP at a time t₁, thetime t₁ being during the pouring, wherein the act of pouring results insubstantially all the volume within the encasing structure that was notoccupied by the photovoltaic device being occupied by the substance; andcuring the substance, wherein the viscosity of the substance aftercuring is over 50,000 cP at a time t₂, the time t₂ being over 1 minutefrom the end of the pouring.
 27. A method for making a device forconverting light into electric current, the method comprising: providingan elongated encasing structure having an interior volume and an arcuateportion, the arcuate portion being transparent to light energy;providing within the encasing structure a photovoltaic device; providingwithin the encasing structure a substance, the substance substantiallyencapsulating the photovoltaic device and taking up substantially allthe free volume that was within the encasing structure prior toproviding the substance; and curing the substance, the step of curingtaking place at a temperature less than 125 degrees Fahrenheit.
 28. Adevice for converting light into electric current, the devicecomprising: an elongated encasing structure, the encasing structurehaving a first portion transparent and capable of passing light energyinto an interior of the encasing structure, the encasing structure beingsubstantially circular in cross section; a photovoltaic devicepositioned within the interior of the encasing structure, and positionedto receive the light energy, the photovoltaic device operable totransform the light energy into electric current, wherein thephotovoltaic device comprises a substrate having a Young's modulus of 20GPa or greater; and a protective space material, disposed between theencasing structure and the photovoltaic device and operable to transmitthe light energy, the protective space material being a non-solidmaterial having an ending viscosity less than 1×10⁶ cP.
 29. A device forconverting light into electric current, the device comprising: anelongated encasing structure, the encasing structure having a firstportion transparent and capable of passing light energy into an interiorof the encasing structure, the encasing structure being substantiallycircular in cross section; a photovoltaic device positioned within theinterior of the encasing structure, and positioned to receive the lightenergy, the photovoltaic device operable to transform the light energyinto electric current, wherein the photovoltaic device comprises asubstrate having a Young's modulus of 20 GPa or greater; and aprotective space material, disposed between the encasing structure andthe photovoltaic device and operable to transmit the light energy, theprotective space material comprising an elastomer gel.
 30. A device forconverting light into electric current, the device comprising: anelongated encasing structure, the encasing structure having a firstportion transparent and capable of passing light energy into an interiorof the encasing structure, the encasing structure being substantiallycircular in cross section; a means for producing electricity from lightenergy disposed within the interior of the encasing structure, andpositioned to receive the light energy, the means for producingelectricity operable to transform the light energy into electriccurrent, wherein the means for producing electricity from light energycomprises a substrate having a Young's modulus of 20 GPa or greater; anda protective space material layer, disposed between the encasingstructure and the photovoltaic device and operable to transmit the lightenergy, the protective space material comprising a gel.
 31. A method ofmaking a device for converting light into electric current, the methodcomprising: providing an elongated encasing structure having an interiorvolume, the encasing structure having a first portion transparent andcapable of passing light energy into an interior of the encasingstructure, the encasing structure being substantially circular in crosssection; providing within the encasing structure a photovoltaic device;pouring into the encasing structure a substance in liquid form, thesubstance having a viscosity of less than 50,000 cP at a time t₁, thetime t₁ being during the pouring, wherein the act of pouring results insubstantially all the volume within the encasing structure that was notoccupied by the photovoltaic device being occupied by the substance; andcuring the substance, wherein the viscosity of the substance aftercuring is over 50,000 cP at a time t₂, the time t₂ being over 1 minutefrom the end of the pouring.
 32. A method for making a device forconverting light into electric current, the method comprising: providingan elongated encasing structure having an interior volume and the havinga cross section that is substantially circular in nature, the encasingstructure having a portion being transparent to light energy; providingwithin the encasing structure a photovoltaic device; providing withinthe encasing structure a substance, the substance substantiallyencapsulating the photovoltaic device and taking up substantially allthe free volume that was within the encasing structure prior toproviding the substance; and curing the substance, the step of curingtaking place at a temperature of less than 125 degrees Fahrenheit.
 33. Adevice for converting light into electric current, the devicecomprising: an elongated encasing structure, the encasing structurehaving a first portion transparent and capable of passing light energyinto an interior of the encasing structure, the encasing structure beingsubstantially circular in cross section; a photovoltaic devicepositioned within the interior of the encasing structure, and positionedto receive the light energy, the photovoltaic device operable totransform the light energy into electric current; a protective spacematerial, disposed between the encasing structure and the photovoltaicdevice and operable to transmit the light energy, the protective spacematerial being a non-solid material having an ending viscosity less than1×10⁶ cP, and the protective space material comprising: a silicon-baseddielectric gel; and a silicon-based oil.
 34. The device of claim 33wherein an amount of silicon-based oil in the protective space materialis greater than 50% by weight.
 35. A device for converting light intoelectric current, the device comprising: an elongated encasingstructure, the encasing structure having a first portion transparent andcapable of passing light energy into an interior of the encasingstructure, the encasing structure being substantially circular in crosssection; a photovoltaic device positioned within the interior of theencasing structure, and positioned to receive the light energy, thephotovoltaic device operable to transform the light energy into electriccurrent; and a protective space material, disposed between the encasingstructure and the photovoltaic device and operable to transmit the lightenergy, the protective space material comprising a gel, the gelcomprising: a silicon-based dielectric gel; and a silicon-based oil. 36.The device of claim 35, wherein the amount of silicon-based oil in theprotective space material is greater than 50% by weight.
 37. A methodfor making a device for converting light into electric current, themethod comprising: providing an elongated encasing structure having aninterior volume, the encasing structure having a first portiontransparent and capable of passing light energy into an interior of theencasing structure, the encasing structure being substantially circularin cross section; providing within the encasing structure a photovoltaicdevice; pouring into the encasing structure a substance in liquid form,the substance having a viscosity of less than 50,000 cP at a time t₁,the time t₁ being during the pouring, wherein the act of pouring resultsin substantially all the volume within the encasing structure that wasnot occupied by the photovoltaic device is occupied by the substance;and curing the substance, wherein the viscosity of the substance aftercuring is over 50,000 cP at a time t₂, the time t₂ being over 1 minutefrom the end of the pouring; the substance comprising: a silicon-baseddielectric gel; and a silicon-based oil.
 38. The method of claim 37,wherein the amount of silicon-based oil in the substance is greater than50% by weight.
 39. A method for making a device for converting lightinto electric current, the method comprising: providing an elongatedencasing structure having an interior volume and the having a crosssection that is substantially circular in nature, the encasing structurehaving a portion being transparent to light energy; providing within theencasing structure a photovoltaic device; providing within the encasingstructure a substance, the substance substantially encapsulating thephotovoltaic device and taking up substantially all the free volume thatwas within the encasing structure prior to providing the substance; andcuring the substance, the step of curing taking place at a temperatureless than 125 degrees Fahrenheit; wherein the substance comprises amixture of a silicon-based dielectric gel and a silicon-based oil. 40.The method of claim 39, wherein the amount of silicon-based oil in thesubstance is greater than 50% by weight.
 41. The device of claim 1,wherein all or said portion of said substrate has a Young's modulus of40 GPa or greater.
 42. The device of claim 1, wherein all or saidportion of said substrate has a Young's modulus of 70 GPa or greater.43. The device of claim 17, wherein the means for producing electricitycomprises a substrate, wherein all or a portion of the substrate isrigid.
 44. The device of claim 43, wherein all or a portion of saidsubstrate has a Young's modulus of 40 GPa or greater.
 45. The device ofclaim 20, wherein all or a portion of said substrate has a Young'smodulus of 40 GPa or greater.
 46. The device of claim 24, wherein all ora portion of said substrate has a Young's modulus of 40 GPa or greater.47. The device of claim 25, wherein all or a portion of the substratehas a Young's modulus of 40 GPa or greater.
 48. The device of claim 28,wherein said all or a portion of the substrate has a Young's modulus of40 GPa or greater.
 49. The device of claim 29, wherein said all or aportion of the substrate has a Young's modulus of 40 GPa or greater. 50.The device of claim 30, wherein said all or a portion of the substratehas a Young's modulus of 40 GPa or greater.
 51. The device of claim 33,wherein the photovoltaic device comprises a substrate, wherein all or aportion of the substrate has a Young's modulus of 40 GPa or greater. 52.The device of claim 33, wherein said all or a portion of the substratehas a Young's modulus of 40 GPa or greater.
 53. The device of claim 35,wherein the photovoltaic device comprises a substrate, wherein all or aportion of the substrate has a Young's modulus of 20 GPa or greater. 54.The device of claim 35, wherein said all or a portion of the substratehas a Young's modulus of 40 GPa or greater.
 55. The device of claim 1,wherein the light energy comprises light having a wavelength between 380nm and 750 nm.